Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods
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GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
Single crystals of layered semiconductors such as WS2 and MoS2 have already proven their efficiency as active elements in photovoltaic cells. Due to their high optical absorption coefficient in the visible range, these materials could be used in the form o ...
Spin-coated solid films of the gold-cluster compd. dodeca-(triphenylphosphine), hexa(chloro)pentapentacontagold Au55(PPh3)12Cl6 are irradiated with a focused 20-keV Ga+ focused-ion beam. Writing speeds on the substrate ranged from 50 up to 2000 mm/s. This ...
The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the ...
Spin-coated solid films of the gold-cluster compd. dodeca-(triphenylphosphine), hexa(chloro)pentapentacontagold Au55(PPh3)12Cl6 are irradiated with a focused 20-keV Ga+ focused-ion beam. Writing speeds on the substrate ranged from 50 up to 2000 mm/s. This ...
The authors report on the in-situ growth over large area of high-quality homogeneous YBa2Cu3O7-x films by single target ion beam sputtering. The 123 stoichiometry transfer to the substrates is obtained by using sufficiently low power ion beams and a grazin ...
A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were ...
The diffusion of Mn, Cr, and Ti in single crystalline copper was investigated in the temperature range between 582 and 800 K, 639 and 829 It and 621 and 747 K, respectively. Ion beam sputtering in combination with secondary ion mass spectrometry (SIMS) was ...
The accumulation of oxygen at GaAs/AlGaAs interfacesgrown by molecular beam epitaxy has been established by secondary ion mass spectrometry profiling of GaAs/AlGaAs multilayerstructures. An enhanced oxygen peak was observed at the boundary between GaAs and ...
