p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes
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Series connected (stacked) CMOS vertical Hall devices were analyzed on the basis of performance of a single five contacts device biased at different common mode voltages with respect to the substrate. The uneven influence of junction field effect on residu ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008
we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
AlInN/GaN unpassivated High Electron Mobility Transistor (HEMT) on Sapphire substrate has yielded a maximum drain current density close to 2 A/mm in steady state. Superior gate length downscaling than AlGaN/GaN devices has been observed owing to the possib ...
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We report a modification by thin silicon nitride intralayers of the Au/n-GaAs)(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon-nitrogen mixture plasma. The nitridati ...
