Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge noise and hyperfine interaction. Here, we demonstrate a scalable approach to synthesize and organize Ge nanowires on silicon (100)-oriented substrates. Germanium nanowire networks are obtained by selectively growing on nanopatterned slits in a metalorganic vapor phase epitaxy system. Low-temperature electronic transport measurements are performed on nanowire Hall bar devices revealing high hole doping of ∼1018 cm–3 and mean free path of ∼10 nm. Quantum diffusive transport phenomena, universal conductance fluctuations, and weak antilocalization are revealed through magneto transport measurements yielding a coherence and a spin–orbit length of the order of 100 and 10 nm, respectively.