Hole-induced anomaly in the thermodynamic behavior of a one-dimensional Bose gas

We reveal an intriguing anomaly in the temperature dependence of the specific heat of a one-dimensional Bose gas. The observed peak holds for arbitrary interaction and remembers a superfluid-to-normal phase transition in higher dimensions, but phase transitions are not allowed in one dimension. The presence of the anomaly signals a region of unpopulated states which behaves as an energy gap and is located below the hole branch in the excitation spectrum. The anomaly temperature is found to be of the same order of the energy of the maximum of the hole branch. We rely on the Bethe Ansatz to obtain the specific heat exactly and provide interpretations of the analytically tractable limits. The dynamic structure factor is computed with the Path Integral Monte Carlo method for the first time. We notice that at temperatures similar to the anomaly threshold, the energy of the thermal fluctuations become comparable with the maximal hole energy, leading to a qualitative change in the structure of excitations. This excitation pattern experiences the breakdown of the quasiparticle description for any value of the interaction strength at the anomaly, similarly to any superfluid phase transition at the critical temperature. We provide indications for future observations and how the hole anomaly can be employed for in-situ thermometry, identifying different collisional regimes and understanding other anomalies in atomic, solid-state, electronic, spin-chain and ladder systems.

Quantum Phase Transition in a Low-Dimensional Weakly Interacting Bose Gas

Luca Fontanesi

This thesis is devoted to the study of the effect of disorder on low-dimensional weakly interacting Bose gases. In particular, the disorder triggers a quantum phase transition in one dimension at zero temperature that is investigated here through the study of the long-range behaviour of the one-body density matrix. An algebraic spatial decay of the coherence marks the quasicondensate, whereas, in the case of strong disorder, an exponential decay is recovered and it characterizes the insulating Bose-glass phase. This analysis is performed using an extended Bogoliubov theory to treat low dimensional Bose gases within a density-phase approach. A systematic numerical study allowed to draw the phase diagram of 1D weakly interacting bosons. The phase boundary obeys two different power laws between interaction and disorder strength depending on the regime of the gas where the transition occurs. These relations can be explained by means of scaling arguments valid in the white noise limit and in the Thomas-Fermi regime of the Bose gas. The phase transition to a quasicondensed phase comes along with the onset of superfluidity: the inspection of the superfluid fraction of the gas is consistent with these predictions for the boundary. The finite temperature case and the scenario in two dimensions are briefly discussed. The quantum phase transition is caused by low-energy phase fluctuations that destroy the quasi-long-range order characterizing the uniform system. Within the approach presented here, the phase fluctuations are identified as the low-lying Bogoliubov modes. Their properties have been investigated in detail to understand which changes trigger the phase transition and we found that the transition to the insulating phase is accompanied by a diverging density of states and a localization length, measured through the inverse participation ratio, that diverges as a power-law with power – 1 for vanishing energy. The fragmentation of the gas is also studied: this notion is very often associated with the onset of the insulating phase. The characterization of the density fragmentation is performed by analyzing the probability distribution of the density. A density profile is defined as fragmented when the probability distribution at vanishing density is finite or divergent and this happens for a gas in the Bose-glass phase. On the contrary, the superfluid phase is characterized by a zero limiting probability of having vanishing densities. This definition is derived analytically, and confirmed by a numerical study. This fragmentation criterion is particularly suited for detecting the phase transition in experiments: when a harmonic trap is included, the transition to the insulating phase can be extracted from the statistics of the local density distribution.

EPFL2011

Normal state transport properties of novel superconductors

Balazs Sipos

The discovery of high temperature superconductivity in the cuprates in 1986 has boosted the research in strongly correlated materials. One strong motivation was and stays the understanding the high-Tc phenomenon with the hope that one can ultimately engineer new materials with even higher Tc. Besides the in-depth investigation of cuprates, there is a strong tendency in the solid state community to find new superconductors, which by themselves are interesting for applications, or by their properties they can contribute to the understanding of the high-Tc phenomenon. The program of my doctoral thesis was three-fold: i) to address one important issue in the cuprate superconductors, that of the role of homogeneity in the underdoped part of the phase diagram; ii) what is the effect of disorder in MgB2 superconductor, which has high potentials for applications; iii) to discover new superconductors in the family of transition metal dichalcogenides. All these materials are in some sense unconventional superconductors. The cuprates by their high Tc and the symmetry of the order parameter, MgB2 by its two-band superconductivity and Tc of 39 K, and the dichalcogenides by the appearance of superconductivity on the background of competing interactions. Measurements of transport properties, such as resistivity and thermoelectric power, were used to get insight in the behavior of these materials. Besides temperature as variable, I applied high pressure, extreme magnetic fields and controlled disorder introduced by fast electron irradiation. In the first part I present the pressure dependent study of two members of the transition metal dichalcogenides having 1T structure, 1T-TiSe2 and 1T-TaS2, where superconductivity was never observed in a pristine sample. 1T-TiSe2 has a CDW phase below 220 K which origin, weather it is driven by an excitonic mechanism or by a Jahn-Teller distortion, is an ongoing question. By applying pressure I showed that the pristine sample is superconducting in the pressure range of 2.0–4.0 GPa. This range remarkably coincides with the short range fluctuating CDW before its disappearance at the upper pressure value. If CDW is due to excitonic interactions than our observations suggest that it can be at the origin of superconductivity, as well. The second dichalcogenide is the 1T-TaS2, where a Mott-insulator phase appears on the top of a commensurate CDW. By applying pressure I was able to melt that Mott-phase, and reveal that the material is superconducting above 2.5 GPa with Tc of 5.9 K. Unexpectedly, superconductivity is born from a nonmetallic phase, and stays remarkably stable up to the highest applied pressure of 24 GPa. In the second part I tried to give my contribution to the field of high-Tc superconductors. I carefully selected few high quality underdoped Bi2Sr2PrxCa1-xCu2O8-δ sample, to address the nature of the low temperature ground state by applying high magnetic field. Although former measurements by other groups showed that at high underdoping, the ground state is an insulator, I found that a sample with as low Tc as 15 K exhibits metallic behavior up to 60 T. Furthermore, I showed that a inhomogeneous distribution of the doping atoms can completely mask the intrinsic normal state of a high-Tc superconductor. In the last part of my thesis I focused on the two-band superconductor MgB2 by studying the scattering between the bands by the means of the Matthiessen's rule. I made a systematic study of the influence of defects created by fast electron irradiation, and found that the the Matthiessen's rule is satisfied for the defect concentration range I induced. I further compare the influence of defects on the critical temperature and the residual resistivity in MgB2 with superconductors with various order parameters, and found that the decrease-rate of Tc in our system is within the range of a response of a superconductor with an s-wave order parameter.

EPFL2008

Pulsed laser deposition of (SrBa)Nb2O6 thin films and their properties

Anna Infortuna

Strontium barium niobate (SrxBa1-xNb2O6, shortly SBN) is a solid solution system with tetragonal tungsten bronze crystal structure. It exhibits a ferroelectric phase with only one polar axis and a transition temperature depending on the Sr/Ba ratio. This thesis studies the growth of SBN thin films, in order to obtain a ferroelectric thin film model system for the study of 180° domain switching close to the ferroelectric phase transition. SBN has been chosen not only because uniaxial, but because it is possible to tune the temperature of phase transition varying the Sr/Ba ratio. It is thus possible to study electric properties of the phase transition close to room temperature, where conduction phenomena related to defects are normally lower. Thin films of SBN were grown by Pulsed Laser Deposition in a vacuum system constructed during this thesis work. For the formulation of a model it is desirable to have a system as close as possible to a single crystal. Therefore deposition parameters have been optimized to grow SBN thin films with the polar axis oriented perpendicular to the film plane. The films are integrated in parallel plate capacitor structures, in order to measure dielectric properties. The stability of the ferroelectric phase is found to be sensitive to impurities; contaminants with concentration below 1% induce a lowering of the transition temperature of about 100°C. Strain as well has influence on the phase transition; in the case of substrate with thermal expansion coefficients different from the SBN ones, the SBN film is under stress. A 0.6% tensile strain induces a lowering of the transition temperature of about 100°C, this is the case of silicon single crystal substrate. Grown on strontium titanate single crystals (STO), whose thermo-mechanical properties are close to the one of SBN, the films exhibit a phase transition temperature compatible with the one measured on single crystals. The obtained films suffer from leakage that is reduced by thermal treatment in oxygen rich atmosphere. The oxygen vacancies, created during the deposition process, are considered to be responsible of leakage. Vacancies recovery upon annealing does not eliminate the problem, and measurement of polarization at room temperature is difficult. However, piezoelectric measurements performed on individual grains, with atomic force microscope, prove that these have ferroelectric properties; by these experiment has been proved that it is possible to switch the polarization. Films with a disordered structure of grains are much less leaky than the ones with columnar grains spanning the whole cross section. These observations lead to the conclusion that conduction goes trough the grain boundaries. On STO single crystals, SBN grows epitaxial in Volmer-Weber mode. With a suitable preparation of the substrate surface, it is possible to induce the growth of films with different orientations of the polar axis: in the film plane, perpendicular to it or inclined of 45°. A model is proposed, explaining the epitaxial relation with the substrate on the basis of the perovskite kernel contained in the unit cell of the tetragonal tungsten bronze structure. The film grows from the nucleation of the perovskite structure that rules the orientation of the film; the high temperature at which the substrate is kept during the deposition, assure the necessary mobility for the arriving atoms to organize in the SBN structure around these nuclei. The study of literature data allows to state that such a model is valid not only for substrates with perovskite structure, but can be extended to substrates with a cubic crystal structure, like magnesium oxide.

EPFL2005