Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films
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The indium desorption rates from InGaAs and InAlAs grown on InP substrates have been measured by wedge transmission electron microscopy as a function of the growth temperature. Desorption becomes significant at 545-degrees-C for both materials. No automatc ...
The indium desorption rates from InGaAs and InAlAs grown on InP substrates have been measured by wedge transmission electron microscopy as a function of the growth temperature. Desorption becomes significant at 545-degrees-C for both materials. No automatc ...
Internal photoemission (IPE) measurements of the conduction band discontinuities at GaAs/amorphous-Ge interfaces have been carried out at the Vanderbilt Free-Electron Laser (FEL). IPE is a simple and direct measurement capable of unprecedented accuracy. Th ...
We have carried out high-resolution photoemission experiments on two quasi-one-dimensional compounds: K0.3MoO3 and (TaSe4)2I. In both systems, a metal-insulator transition associated with a lattice distortion is reported. We show that the Fermi-step charac ...