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Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Publications associées (34)

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In the past half-century, the semiconductor industry has relied on the scaling of complementary metal-oxide-semiconductor (CMOS) transistor dimensions and on material and geometrical innovations to increase the computational density. Approaching the end of ...

EPFL2018

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The modulated scattering technique is based on the use of reconfigurable electromagnetic scatterers, structures able to scatter and modulate an impinging electromagnetic field in function of a control signal. The modulated scattering technique is used in a ...

2017

The vast majority of disruptive innovations in science and technology has been originated from the discovery of a new material or the way its properties have been exploited to create novel devices and systems. New advanced nanomaterials will have a lasting ...

EPFL2016

This paper presents the first low noise complementary metal oxide semiconductor (CMOS) terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS pr ...

Mdpi Ag2016

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four di ...

2016

Theory, design and measurement of near-optimal graphene reconfigurable and non-reciprocal devices at terahertz frequencies

Michele Tamagnone

This thesis explores the applications of graphene for terahertz and far infrared optical components and antennas, with particular emphasis on tunable and non-reciprocal devices. Both terahertz technologies and graphene are emerging fields which hold many p ...

EPFL2016

CMOS Image Sensors (CIS) overtook the charge coupled devices (CCDs) in low noise performance. Photoelectron counting capability is the next step for CIS for ultimate low light performance and new imaging paradigms. This work presents a review of CMOS image ...

EPFL2016

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Antonio Paone

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2). We present the advantages of VO2-based capacitors over alternative technologies for micr ...

2015

Absorption modulation of terahertz metamaterial by varying the conductivity of ground plane

Gabriel Aeppli, Joe Martin Bailey, Wanli Ma

Most research focuses on varying the resonator and dielectric spacer to configure the absorption and resonant frequency of terahertz (THz) metamaterial absorbers (MAs), where a metal ground plane is used as a perfect reflector of incident THz waves. In thi ...

Amer Inst Physics2014

A THz 31×31 pixel, 100 fps image sensor integrated in a 130 nm CMOS process is presented. Taking advantage of the possibility to modulate the active source that lights the scene, a significant improvement in sensitivity and NEP is achieved by shifting the ...

2014