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The flexibility of the new available Inductively Coupled Plasma (ICP) reactors provides a lot of possibilities for process development in dry etching field. Deep anisotropic etching of silicon is now possible under control (etch rate, profiles, uniformity) ...
Fused silica microlenses with low numerical apertures (NAs) were fabricated. The original photoresist element was realized by the melting resist technology and was transferred into fused silica by reactive ion etching. Low selectivity etching was applied t ...
Ferroelectric thin films for memory and MEMS applications require noble metal or refractory metal oxide electrodes. In this paper, physical and chemical parameters during etching of RuO2 and Pr by a dual frequency ECR/RF reactor have been investigated. The ...
We report on powder blasting as a promising technology for the three-dimensional structuring of brittle materials. We investigate the basic parameters of this process, which is based on the erosion of a masked substrate by a high-velocity eroding powder be ...
Ferroelectric thin films for memory and MEMS applications require noble metal or refractory metal oxide electrodes. In this paper, physical and chemical mechanisms during platinum etching by a dual frequency ECR/RF reactor have been investigated. An ion be ...
The low-frequency noise of lattice-matched InAlAs/InGaAs/InP high electron mobility transistors (HEMT's) gate recess etched with a highly selective dry etching process and with conventional wet etching were studied at different gate and drain biases for th ...
Institute of Electrical and Electronics Engineers1998
The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...
Low-frequency noise (LFN) characteristics of dry-and wet-etched InAlAs/InGaAs HEMTS have been studied. It is found that due to passivation of deep traps by hydrogen the excess LFN (1/f and G-R) in dry-etched HEMTs is significantly lower than in wet-etched ...
The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...
Ferroelectric capacitive devices for memory and MEMS applications require patterned ferroelectric thin films with high anisotropic etched features. In this paper, physical and chemical parameters during etching of Pb(Zr0.53Ti0.47)O-3 (PZT) by a dual freque ...
