A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation
Publications associées (22)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Crystalline silicon (c-Si) homojunction solar cells account for over 90% of the current photovoltaic market. However, further progress of this technology is limited by recombinative losses occurring at their metal-semiconductor contacts. The goal of this t ...
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
Doping of organic light-emitting devices using highly luminescent molecules is a well-established strategy to improve brightness, efficiency and lifetime or to adjust emission color and color purity. Laser dyes from the pyran-containing donor-acceptor fami ...
The CaCu3Ti4O12 (CCTO) thin films were deposited on Pt/TiO2/Ti/SiO2/Si (100) substrates by pulsed laser deposition. The temperature dependences of dielectric constant were measured in the as-produced thin film samples, showing the so-called colossal dielec ...
The anatase phase of TiO2 is a key material in the third generation of photovoltaics and for photo-catalytic devices. The number of promising applications, where one would profit from the electronic degrees of freedom of the material, like in memristors, s ...
We calculate band-to-band radiative transition rate spectra in pure Ge as functions of applied tensile strain, heavy doping, charge injection density, and temperature. Direct and indirect phonon-assisted transitions are considered. Deformation potential th ...
Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurement ...
The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnos ...
we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
We report on the structural, magnetic, optical and transport properties of As-doped Zn0.9Co0.1O thin films. X-ray diffraction indicates highly (0 0 0 1) textured samples free of secondary phases. Transmission UV-Vis spectroscopy shows that Co is in the +2 ...