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A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

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Passivating contacts for homojunction solar cells using a-Si:H/c-Si hetero-interfaces

Bénédicte Demaurex

Crystalline silicon (c-Si) homojunction solar cells account for over 90% of the current photovoltaic market. However, further progress of this technology is limited by recombinative losses occurring at their metal-semiconductor contacts. The goal of this t ...

EPFL2014

We calculate band-to-band radiative transition rate spectra in pure Ge as functions of applied tensile strain, heavy doping, charge injection density, and temperature. Direct and indirect phonon-assisted transitions are considered. Deformation potential th ...

Amer Physical Soc2013

Nature of the Charge Carriers and Conduction Mechanism in Anatase TiO2

Jacim Jacimovic

The anatase phase of TiO2 is a key material in the third generation of photovoltaics and for photo-catalytic devices. The number of promising applications, where one would profit from the electronic degrees of freedom of the material, like in memristors, s ...

EPFL2012

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

On origin and intrinsic electrical properties of the colossal dielectric constant state in CaCu3Ti4O12

Paul Muralt

The CaCu3Ti4O12 (CCTO) thin films were deposited on Pt/TiO2/Ti/SiO2/Si (100) substrates by pulsed laser deposition. The temperature dependences of dielectric constant were measured in the as-produced thin film samples, showing the so-called colossal dielec ...

Iop Publishing Ltd, Dirac House, Temple Back, Bristol Bs1 6Be, England2010

P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli, Carlo Colombo, Bernt Ketterer, Tonko Garma, Marco Nicotra

Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurement ...

American Chemical Society2010

The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnos ...

2010

A new single photon avalanche diode in CMOS high-voltage technology

Radivoje Popovic

we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

We report on the structural, magnetic, optical and transport properties of As-doped Zn0.9Co0.1O thin films. X-ray diffraction indicates highly (0 0 0 1) textured samples free of secondary phases. Transmission UV-Vis spectroscopy shows that Co is in the +2 ...

Elsevier2006

Space charge and polarization effects upon doping organic light-emitting diodes with pyran-containing donor-acceptor molecules

Frank Nüesch, Libero Zuppiroli, Yiming Cao, Detlef Berner, Xiao Wang

Doping of organic light-emitting devices using highly luminescent molecules is a well-established strategy to improve brightness, efficiency and lifetime or to adjust emission color and color purity. Laser dyes from the pyran-containing donor-acceptor fami ...

VSP BV, Zeist, Netherlands2004