Publication

Stencil-Based Selective Surface Functionalization of Silicon Nanowires in 3D Device Architectures for Next-Generation Biochemical Sensors

Publications associées (37)

Graph Chatbot

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Connectez-vous pour utiliser Chat avec Graph Search

Water-permeation sensor and method for making the same

Yves Leterrier, Stéphanie Lacour, Kyungjin Kim, Massimo Mariello

A water permeation sensor suitable for monitoring and quantitatively assessing ultra-low permeability of thin film encapsulations engineered for bioelectronic microdevices, its fabrication as well as device comprising the same are disclosed herein. ...

2024

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Optical manipulation of plasmonic nanoparticles: Applications in surface chemistry and nano-optics

Jeonghyeon Kim

Optical tweezers are devices that can manipulate nano- and microparticles using a laser. The principle of optical tweezers is to apply a force to an object using the momentum of light. This force is very small, but it is sufficient to move things in the mi ...

EPFL2023

Semiconductor Nanowires: To Grow or Not to Grow?

Anna Fontcuberta i Morral

Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categorie ...

2019

Fast turnaround fabrication of silicon point-contact quantum-dot transistors using combined thermal scanning probe lithography and laser writing

Matthieu Jean Michel Rüegg, Cheng Wang, Nolan Lassaline

The fabrication of high-performance solid-state silicon quantum-devices requires high resolution patterning with minimal substrate damage. We have fabricated room temperature (RT) single-electron transistors (SETs) based on point-contact tunnel junctions u ...

2018

Silicon Nanowires for Biosensing

Giovanni De Micheli, Sandro Carrara, Francesca Puppo

Over the past 20 years, nanomaterials, such as quantum dots, nanoparticles, nanowires(NWs), nanotubes, and graphene, have received enormous attention due to their suitable properties for designing novel nanoscale biosensors. Nanomaterials are very small st ...

Elsevier2018

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 20 years, they have been intensively studied for the prospects that their unique quasi-one dimensional shape offers ...

EPFL2016

The goal of this thesis is to master the synthesis of GaAs nanowires ensembles on Si for their application in solar cells. Semiconductor nanowires present promising characteristics for photovoltaic applications: they benefit from their longitudinal high as ...

EPFL2016

, ,

We present a review on stencil lithography and focus on the particular interest and challenges when applying it to the scalable fabrication of nm-size devices. We first describe the basic technique with its main advantages and challenges. Then we review th ...

Elsevier2015

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez, Sara Rigante

A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) featuring a high density array (7 or 8 x 20 SiNWs, > 4 Fins vertically stacked) of fully depleted, ultra-thin (SiNWs diameters similar to 15-30 nm, Fin width/height fw si ...

Elsevier2014