Publication
Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots
Publications associées (93)
Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE
Nicolas Grandjean, Gordon Jens Callsen, Sebastian Pascal Tamariz Kaufmann
We present an overview on the growth and the optical properties of GaN quantum dots (QDs) embedded in planar AlN grown on the following three different types of substrates: single AlN crystal, AlN on sapphire, and AIN on Si(111). QD density control over th ...
IEEE2019Solution-Processed Organic Optical Upconversion Device
Frank Nüesch, Roland Hany, Santhanu Panikar Ramanandan, Matthias Diethelm, Sina Abdolhosseinzadeh
Imaging in the near-infrared (NIR) is getting increasingly important for applications such as machine vision or medical imaging. NIR-to-visible optical upconverters consist of a monolithic stack of a NIR photodetector and a visible light-emitting unit. Suc ...
AMER CHEMICAL SOC2019Electrically tunable quantum emitters in an ultrathin graphene-hexagonal boron nitride van der Waals heterostructure
Klaus Kern, Marko Burghard, Shai Mangel, Alessio Scavuzzo
We explore the photoluminescence (PL) properties of hexagonal boron nitride (h-BN) quantum emitters embedded within atomically thin graphene/h-BN heterostructures fabricated by mechanical transfer. Stable light emission could be observed from h-BN emitters ...
AMER INST PHYSICS2019Quantum imaging with SPAD arrays
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic
We present a novel quantum imaging modality based on photon correlation measurement with a single photon avalanche diode (SPAD) array in a confocal setup. This enables unprecedented simplicity in realization of photon correlation measurements, demonstrated ...
2019Quantum-Limited Measurements Using an Optical Cavity with Modulated Intrinsic Loss
Alexander Tagantsev, Sergey Fedorov
We analyze a cavity optomechanical setup, in which the position of an oscillator modulates the internal optical loss. We show that, in contrast to systems with a fixed internal loss, in such a setup, quantum-limited position measurements can be performed a ...
AMER PHYSICAL SOC2019Site-controlled quantum dots integrated with photonic crystal waveguides and cavities
Quantum mechanics did not only deeply transform our world view down to a philosophical level, it is also expected to be key ingredient of future so-called quantum technologies. Indeed, quantum properties of matter such as isolated single particles or entan ...
EPFL2018GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Gwénolé Jean Jacopin, Wei Liu, Camille Haller
Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...
AMER INST PHYSICS2018On-the-fly ab initio semiclassical evaluation of time-resolved electronic spectra
Jiri Vanicek, Tomislav Begusic, Julien Roulet
We present a methodology for computing vibrationally and time-resolved pump-probe spectra, which takes into account all vibrational degrees of freedom and is based on the combination of the thawed Gaussian approximation with on-the-fly ab initio evaluation ...
AMER INST PHYSICS2018Multistep Photoluminescence Decay Reveals Dissociation of Geminate Charge Pairs in Organolead Trihalide Perovskites
Shaik Mohammed Zakeeruddin, Marius Franckevicius
Charge carrier dynamics in organolead iodide perovskites is analyzed by employing time-resolved photoluminescence spectroscopy with several ps time resolution. The measurements performed by varying photoexcitation intensity over five orders of magnitude en ...
Wiley-VCH Verlag Berlin2017Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires
Hua Zhang, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Mehran Shahmohammadi
We report on the direct observation of the diffusion of carriers in graded InGaN/GaN quantum wells in a nanowire. By probing the local dynamics at the nanoscale, along the wire for different temperatures between 4 and 250 K, we conclude that this diffusion ...
American Chemical Society2016