Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots
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Stackings of GaN quantum dots embedded in an AlN matrix, constituting periodic structures with a mean aluminum content in the 80%-90% range, have been investigated by Raman spectroscopy under excitation in the visible range, i.e., far from resonant conditi ...
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Exciton states in semiconductor nanostructures with disorder exhibit level repulsion, a concept known from random matrix theory. Its manifestations in time-resolved Rayleigh spectra and in the autocorrelation of optical nearfield spectra are explained, and ...
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