Formation mechanisms of low-dimensional semiconductor nanostructures grown by OMCVD on nonplanar substrates
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A study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented. Ga droplets with different diameters (340-90 nm) were deposited on the substrate. prior to growth, to determine any effect on the nanocolumns size and d ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
In this paper the effect of varying temperature, pressure and chemical precursors on the vapour-liquid-solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW ...
It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either A ...
We present three different prepn. methods for CdSe colloidal nanoparticles that, when carried out into the Ostwald ripening regime, lead to the development of complex spectral patterns resulting from the overlap of several distinct components corresponding ...
Quantum dots (QDs) have a potential for application in semiconductor optical amplifiers (SOAs), due to their high saturation power related to the low differential gain, fast gain recovery and wide gain spectrum compared to quantum wells. Besides all advant ...
A review. Recent progress of colloidal chem. in the prepn. of multimaterial nanostructures incorporating transition-metal oxides is reviewed. Attention is focused on the emerging class of hybrid nanocrystals (HNCs), in which domains of different materials ...
We present a microscopic theoretical analysis of time and spatially resolved photoluminescence of naturally occurring quantum dots induced by monolayer fluctuations in the thickness of semiconductor quantum wells. The analysis is based on a recently develo ...
A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic ...
Silicon oxide films containing CdS quantum dots have been deposited on glass substrates by a sol–gel dip-coating process. Hereby the CdS nanocrystals are grown during the thermal annealing step following the dip-coating procedure. Total hemispherical trans ...