Formation mechanisms of low-dimensional semiconductor nanostructures grown by OMCVD on nonplanar substrates
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Thin a-plane (1 1 2 0) GaN layers have been grown on r-plane (1 1 0 2) sapphire substrates by hydride vapor phase epitaxy (HVPE), using either a single-step high-temperature (HT) growth or a two-step growth method similar to that of metal organic vapor pha ...
We report a low-temperature photoluminescence study of a series of AlxGal-xN/GaN quantum wells of various widths L and with x ranging from 0.11 to 0.25, grown by molecular beam epitaxy on silicon (111) substrates. Such quantum wells are subject to an impor ...
The formation mechanisms, structure and optoelectronic properties of Ga(In)As/(Al)GaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition on patterned (111)B GaAs substrates are reviewed. With this approach, it is possible ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
Wurtzitic nitride quantum wells grown along the (0001) axis experience a large Stark effect induced by the differences of spontaneous and piezoelectric polarizations between the well and barrier materials. In AlxGa1-xN/GaN quantum wells, due to the adverse ...
Silicon has become the most important material for the semiconductor industry, due to several advantages like good heat conductance or the high quality of its oxide. Nevertheless, for opto-electronic devices, the limitation of its indirect band-gap has ant ...
The influence of the basic growth parameters (growth temperature, V/III ratio and growth rate) on the surface morphology of AIN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrate is reported. Optimized-growth conditions lead to a significant d ...
We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (< 1 degrees)-misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorienta ...
Spatially resolved photoluminescence spectra of thin GaAs quantum wells are measured by near-field spectroscopy, and two-energy autocorrelation functions of the spectra are derived. We demonstrate distinctly different autocorrelation functions for a 3-nm-t ...
Diamine molecules were used to chemically direct the assembly of carboxylic acid terminated monolayer protected gold nanoparticles onto Au surfaces patterned with mercapto-hexadecanoic-acid by microcontact printing or dip pen nanolithography. ...