Exciton dynamics in semiconductor confined systems
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We present second-harmonic generation experiments in p-doped asymmetrically stepped quantum wells using the emission of a free-electron laser in the wavelength interval between 13 and 18 mu m. The wells are designed such that the three fewest valence-subba ...
A theoretical investigation of the exciton formation process from free carriers in a single GaAs/Al1-xGaxAs quantum well is presented. The mechanism for the formation processes is provided by the interaction of the electrons and holes with phonons. The con ...
A theoretical model for the investigation of the dynamics of microcavity polaritons in the strong-coupling regime is proposed. The resulting photoluminescence dynamics at small angles is studied as a function of the angle of observation, the cavity detunin ...
The coexistence of localized and free holes in modulation doped InGaAs/InP quantum wells, which show Fermi edge singularities in the cw photoluminescence and excitation spectra, has been determined by picosecond time-resolved luminescence spectroscopy. A l ...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We focus on the formation processes assisted by emission and absorption of acoustic and optical phonons. The formation rates are evaluated and compared to the ex ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering rate of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing be tween the first two electron subbands is smaller than the LO phono ...
Using luminescence upconversion with 100 fs resolution, we have investigated the intersubband scattering of electrons in GaAs quantum wells (QWs). The energy separations between the first and second confined electron subband (E(12)) were more or less than ...
We have investigated the intersubband scattering of electrons in GaAs quantum wells using luminescence up-conversion with 100-fs resolution. The decay time of the n=2 electron-to-heavy-hole transition (e,hh)(2) depends both on the excess energy of the char ...
A quantum theory of quantum well polaritons in semiconductor microcavities is developed. The model takes into account the coupling between the exciton level and the structured continuum of electromagnetic modes relative to the particular geometry of the mi ...
A theoretical investigation of the dynamics in a photoluminescence experiment in strong-coupling semiconductor microcavities is presented. Radiative recombination rates of microcavity polaritons in the strong-coupling regime and their scattering rates with ...
