Selective light induced chemical vapour deposition of titanium dioxide thin films
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Intermetallic thin films of stoichiometric NiAl and Ni3Al have been deposited onto n-type silicon (100) and nickel (110) substrates using r.f.-magnetron co-sputtering. The morphology and crystal structure of the thin films have been studied by transmission ...
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In the present work, several series with variation of deposition parameters such as hydrogen dilution ratio, VHF-power and plasma excitation frequency fexc have been extensively analyzed. Compared with `conventional' more-stable layers obtained at 200-250 ...
A method for the gas phase deposition of partially fluorinated or perfluorinated alkyl silanes onto a substrate in a reaction chamber includes cleaning the substrate, hydrating the substrate with steam, drying the substrate and silanization of the substrat ...
SWISSOPTIC AG (SWIS-Non-standard) ECOLE POLYTECHNIQUE FEDERALE LAUSANNE (ECOL-Non-standard)2002
Microcrystalline hydrogenated silicon films (muc-Si:H) have been deposited by a high current DC plasma in argon-silane-hydrogen mixtures at growth rates up to 10 nm/s and at substrate temperatures below 500 degreesC. Scanning electron microscopy, X-ray dif ...
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We report here on ferromagnetic/superconductor FM/SC and SC/FM double layers deposited without a buffer layer between FM and SC. Thin films of La0.7Sr0.3MnO3 (LSMO) are used for the FM, and YBa2Cu3O7-x (YBCO) for the SC. Both films can grow crystalline on ...
A combined PVD/PECVD process for the vacuum deposition of titaniumcontainingamorphoushydrogenatedcarbonfilms is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-t ...