Publication

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Publications associées (27)

Development of MEMS Programmable Diffraction Gratings for Spectroscopic Applications in the Visible, Near- and Mid-Infrared

This work presents the development of two MEMS programmable diffraction gratings designed for spectroscopic applications in the visible, near- and mid-infrared. These devices have been developed to limit distortion of their optical surfaces at rest and thr ...

EPFL2011

Electrical Modeling of Long-Wavelength VCSELs for Intrinsic Parameters Extraction

Elyahou Kapon, Vladimir Iakovlev

We present an efficient method to model the small-signal modulation response of a long-wavelength VCSEL chip using an equivalent electrical circuit. This circuit serves two distinct purposes. Based on T-Matrix formalism, it is used to remove the parasitics ...

2010

Photosensitivity and luminescence of chromium and bismuth doped fibers

Christian Ban

Optical fiber materials with broad-band gain in the visible or in the telecommunication window are of great interest for optical communication or the biomedical domain in order to built integrated tunable lasers, amplifiers, ultra-short pulse lasers, or br ...

EPFL2009

Light control and microcavity lasers based on quantum wires integrated in photonic-crystal cavities

Kirill Atlasov

Novel light-emitting devices and micro-optical-circuit elements will rely upon understanding and control of light-matter interaction at the nanoscale. Recent advances in nanofabrication and micro-processing make it possible to develop integrable solid-stat ...

EPFL2009

Dynamics of quantum dot lasers

Pablo Moreno

The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wav ...

EPFL2008

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Julien Dorsaz

Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...

EPFL2006

Group iii nitride light-emitting devices having a polarization-doped region

Jean-François Carlin

A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitrid ...

2006