Effect of substrate crystalline morphology on the adhesion of plasma enhanced chemical vapor deposited thin silicon oxide coatings on polyamide
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Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
The deposition of copper by low pressure chem. vapor deposition (CVD) from Cu bis-hexafluoroacetylacetonate is monitored in real time and in situ by the measurement of the optical reflectivity and elec. resistance of the growing metal film. Changes of the ...
Intrinsic stress measurements were carried out on hydrogenated amorphous silicon (a-Si:H) films deposited with different excitation frequencies (13.56-70 MHz), by plasma-enhanced chemical vapor deposition. It was observed that films deposited at 70 MHz hav ...
There is a need for chemically resistant coatings that protect the exposed surface of microfluidics components. Pinhole free films with low stress and a good uniformity on flat and inclined surfaces are required. In this study, amorphous silicon carbide (S ...