Use of ferroelectric hysteresis parameters for evaluation of niobium effects in lead zirconate titanate thin films
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The switching, fatigue and rejuvenation phenomena of ferroelectric PZT thin films with differently processed electrode-PZT interfaces and of different thicknesses have been investigated. The ferroelectric contribution to the switching parameters has been i ...
Pb(Zr1–xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. Fo ...
A study was conducted on the effects of microstructure, atmosphere, and several dopants on the electrical conductivity of bismuth titanate (Bi4Ti3O12, BIT), Increased grain size increased the conductivity in undoped BIT as did acceptor dopants that substit ...
The effect of Nb on the hysteresis parameters of sol-gel Pb-1.1-x/2(Zr0.53Ti0.47)(1-x)NbxO3 (x = 0.0 - 0.05, increments of 0.01) thin films is reported. Two sets of (111) textured films, rapid annealed at 600 and 650 degrees C, were studied. The degree of ...
Dielectric properties of perovskites are studied both to gain insight into fundamental aspects of the freezing of polar disorder, and to investigate their technological potential. The dynamics of freezing of polar disorder is investigated in single crystal ...
Pb(Zr0.70Ti0.30)O-3 rhombohedral thin films of (100), (110)/(111) and (111) textures were prepared on Si wafers with Ti/Pt electrodes. Microstructures and textures were characterized by XRD, SEM, TEM, and AFM. Ferroelectric, dielectric and fatigue properti ...
The switching of the sandwich structure ''ferroelectric+thin dielectric layer'' is theoretically studied. The behavior of the remanent polarization, P-r, coercive field, E(c), maximal polarization on the loop, P-s, and the slope of the hysteresis loop at E ...
