Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O-3 thin film capacitors with Pt electrodes
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The domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 (PZT) ferroelectric thin film capacitors with Pt top (TE) and bottom electrodes (BE) were studied by means of atomic force microscopy (AFM). The experimental configuration used ...
The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...
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A simple and reliable method which allows one to distinguish between the two major microscopic scenarios for the suppression of the switching polarization (P-r(s)), i.e., pinning of ferroelectric domain walls (DWs) through the Pb(Zr,Ti)O-3 film (PZT) (bulk ...
Combined interferometer and polarimeter systems, using a single detecting element per line of sight, are susceptible to perturbation of the interferometric phase when modulation of the polarization vector is applied. This issue has been investigated extens ...
In order to determine the polarization dependence of multiphoton transitions to excitonic states in solids, we develop a symmetry analysis of the transition-rate formula that includes the study of its transformation properties under permutation of the phot ...
