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Pt-ion-implantation-induced suppression of leakage conduction in Pt/Pb(ZrxTi1-x)O-3/Pt capacitors

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High Force Density Textile Electrostatic Clutch

Herbert Shea, Ronan Julien Hinchet

Clutches are key elements for blocking or coupling motion in wearable systems such as soft exoskeletons, haptic clothing, and rehabilitation equipment. Electrostatic clutches (ESclutches) are compact and light, making them particularly well-suited for wear ...

WILEY2019

Observation of charge-transfer-driven antiferroelectricity in 3d-pyrochlore multiferroic Cu2OCl2

Helmuth Berger, Wei Li

Very recently, multiferroic behavior close to the boiling temperature of liquid nitrogen was reported in oxohalide-based Cu2OCl2. In this study, we have established yet another novel mechanism for the origin of charge ordering in multiferroic Cu2OCl2. The ...

ELSEVIER SCIENCE BV2019

Modeling Dielectric Constant Variability in Aggregate Polymers from CV Measurements

Marco Mattavelli, Jean-Michel Sallese, Catherine Dehollain, Diego Ruben Barrettino

Recently a new technique based on capacitive sensing has been developed and used to estimate the amount of moisture in polymers by means of the deviation of the dielectric constant. This technique is expected to be used for in-line monitoring of aggregate ...

IEEE2019

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Mihai Adrian Ionescu, Paul Muralt, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi

In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

IEEE2019

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The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Ali Saeidi

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

2018

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The charged domain wall is an ultrathin (typically nanosized) interface between two domains; it carries bound charge owing to a change of normal component of spontaneous polarization on crossing the wall. In contrast to hetero-interfaces between different ...

2018

We report on the stabilization of ferroelectric HfxZr1-xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 degrees C preheat step combined with millisecond flash lamp pulses, ferroelectr ...

AMER INST PHYSICS2018

Domain nucleation behavior in ferroelectric films with thin and ultrathin top electrodes versus insulating top layers

Nava Setter, Ludwig Feigl

The effect of varying the thickness of Pt top electrodes made by the electron beam induced deposition technique on the domain nucleation characteristics of Pb(Zr,Ti)O-3 films has been investigated by piezoresponse force microscopy. The advantage of this ex ...

Elsevier Science Sa2017

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Lead zirconate titanate (PZT) thin films on insulator-buffered silicon substrates with interdigitated electrodes (IDEs) have the potential to harvest more energy than parallel plate electrode (PPE) structures because the former exploit the longitudinal pie ...

Ieee-Inst Electrical Electronics Engineers Inc2013