Pt-ion-implantation-induced suppression of leakage conduction in Pt/Pb(ZrxTi1-x)O-3/Pt capacitors
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We demonstrate a program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2-Al2O3 nanolaminate (HAN)/Al2O3. The memory capacitor exhibits a high capacitance density of 4.5 fF/mu m(2), a large memory window of 1.45 V in the ...
American Institute of Physics2006
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The capacitance of monolayer-protected gold nanoclusters (MPCs), CMPC, in solution has been theoretically reconsidered from an electrostatic viewpoint, in which an MPC is considered as an isolated charged sphere within two dielectric layers, the intrinsic ...
2006
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The phenomenon of time-dependent polarization loss in poled ferroelectric capacitors, also known as retention, represents one of the most important reliability issues for ferroelectric nonvolatile memories. In a number of publications different ways to con ...
2005
The change in permittivity of bismuth zinc niobate (BZN) films with the cubic pyrochlore structure under an applied electric field was measured as a function of temperature. Dielectric measurements were performed using parallel-plate capacitor structures w ...
2005
The operational range of MEMS electrostatic parallel plate actuators can be extended beyond pull-in with the presence of an intermediate dielectric layer, which has a significant effect on the behavior of such actuators. Here we study the behavior of canti ...
2005
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Multilayered inteference filters of dielectric thin films have been designed for the application as energy-efficient coloration of collector cover glasses. The optical behavior of the designed multilayers is analyzed by computer simulations yielding the CI ...
2005
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In this work, a set of low-temperature thick-film dielectrics consisting of two high-lead low-temperature glasses, stabilised by various amounts of alumina filler, is characterised on alumina and aluminium metal, as a function of firing temperature. Corres ...
2005
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The impact of electrode-adjacent passive layers on the small signal dielectric response of a ferroelectric film containing a 180degrees-domain pattern has been analyzed. It is shown that, for a realistic physical situation, the so-called "in-series capacit ...
2004
Relaxor ferroelectric thin films exhibit a drastic reduction in the dielectric constant and associated properties in the thin film form, even for thicknesses in the micron range, which are essentially infinity for the size effects typically investigated in ...
EPFL2004
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A theoretical study on the effect of spontaneous polarization screening on the dielectric response of ferroelectric films with 180 degrees domains going through the film thickness (through-domains) is presented. It has been shown by several researchers tha ...
