Pt-ion-implantation-induced suppression of leakage conduction in Pt/Pb(ZrxTi1-x)O-3/Pt capacitors
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The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
EPFL2004
Ferroelectric thin films are widely studied nowadays as potential replacements for semiconductors in modern tunable microwave devices such as tunable filters, phase-shifters, frequency mixers, power dividers, etc. Recent progress in the deposition of compl ...
We studied polarization switching of 295 nm thick -oriented-Pb(Zr0.45Ti0.55)O-3 (PZT) thin-film capacitors through a polarization hysteresis loop and piezoelectric force microscopy (PFM) on top of the Pt electrode. Positive voltage pulses of 450 kV/cm ...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O-3 (PZT)-based capacitors have been studied using piezoresponse force microscopy. Visualization of polarization distribution and d(33)-loop measurements in individual ...
Direct observation of polarization distribution at nanoscale by scanning force microscopy across partially etched Pb(Zr,Ti)O-3 film ferroelectric capacitors with size 2x3 mum and preferential orientation (111) has revealed an anomalous polarization pattern ...
2002
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Relaxor Pb(Sc-12/Ta-1/2)O-3 (PST) thin films have been prepared using mixed alkoxide and acetate precursors on TiO2/Pt/TiO2/SiO2/Si substrates. Relaxor behavior as evidenced by frequency dispersion of the permittivity as a function of temperature was obser ...
The influence of addition of a low-loss linear dielectric material to a tunable ferroelectric material has been investigated in terms of the electrostatic consideration. The calculations of the dielectric loss and dielectric non-linearity of ferroelectric- ...
In this paper, the resistive and piezoresistive properties of a commercial resistive composition (Du Pont 2041), often used for strain-gauge applications, are examined on several dielectric compositions, which themselves are deposited onto various ceramic ...
Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
A ferroelectric film capacitor structure (FeCAP), in particular for memory applications, comprises a layer of doped ferroelectric material between facing electrodes having a varying/asymmetric doping profile, the concentration of the dopant in the ferroele ...