Sputter depositionSputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K).
HydroxydeUn hydroxyde est un sel métallique de formule générique (comme NaOH, KOH, , ...), constitué d'un cation métallique et d'un ou de plusieurs anions hydroxydes. L'anion hydroxyde (ou hydroxyle) se réfère à l'ion OH. C'est un des ions polyatomiques les plus simples constitué d'un atome d'oxygène et d'un atome d'hydrogène. Il est porteur d'une seule charge électrique négative centrée sur l'atome d'oxygène. Cet anion est basique car il peut accepter un proton (, ou ) et donner ainsi lieu à la formation d'une molécule d'eau ().
Crystalline siliconCrystalline silicon or (c-Si) Is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are assembled into solar panels as part of a photovoltaic system to generate solar power from sunlight. In electronics, crystalline silicon is typically the monocrystalline form of silicon, and is used for producing microchips.
Transparent conducting filmTransparent conducting films (TCFs) are thin films of optically transparent and electrically conductive material. They are an important component in a number of electronic devices including liquid-crystal displays, OLEDs, touchscreens and photovoltaics. While indium tin oxide (ITO) is the most widely used, alternatives include wider-spectrum transparent conductive oxides (TCOs), conductive polymers, metal grids and random metallic networks, carbon nanotubes (CNT), graphene, nanowire meshes and ultra thin metal films.