Pb(Mg1/3Nb2/3)O-3 and (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) relaxor ferroelectric thick films: Processing and electrical characterization
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Growth and properties of sputter in situ sputter deposited Pb(Z,Ti)O-3 (PZT) thin films have been studied on (111)-textured Pt electrodes as a function of seed layers of the type (TiO2)(x)(PbO)(y). The PZT process was run with a limited lead excess resulti ...
Pyrochlore free Pb(Mg1/3Nb2/3)O-3 (PMN) thin films were prepared from mixed-metal precursors solutions using the sol-gel process. Lead acetate [Pb(CH3COO)(2)], magnesium acetate [Mg(CH3COO)(2)] and niobium ethoxide [Nb(C2H5O)5] were used as starting materi ...
Nonlinear dielectric response of soft and hard PZT is experimentally studied at subswitching conditions. The correlations between defect disordering and parameters of nonlinear dielectric response and hysteresis are demonstrated and discussed. (c) 2005 Els ...
The influence of film thickness on the material properties of aluminum nitride (AlN) thin films deposited on Pt(111) electrodes has been investigated experimentally by means of x-ray diffraction, dielectric response, atomic force microscopy, interferometry ...
Relaxor ferroelectric thin films exhibit a drastic reduction in the dielectric constant and associated properties in the thin film form, even for thicknesses in the micron range, which are essentially infinity for the size effects typically investigated in ...
Sol-gel process has successfully been applied for the deposition of porous PbZrxTi1-xO3 (x = 0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excell ...
Lead oxide based ferroelectrics, represented by lead zirconate titanate (Pb(Zr,Ti)O-3) or PZT) are the most widely used materials for piezoelectric actuators, sensors and transducers due to their excellent piezoelectric properties. Considering lead toxicit ...
Quasi-amorphous BaTiO3 thin films (see Figure) represent a polar ionic solid without spatial periodicity. Most probably, polarity of the quasi-amorphous BaTiO3 is associated with directional ordering of crystal motifs formed in the steep temperature gradie ...
Using recently published experimental data we calculated the piezoelectric response of rhombohedral 0.67Pb(Mg1/3Nb2/3)O-3-0.33PbTiO(3) monodomain single crystals along arbitrary directions. The calculations indicate that the value of the longitudinal piezo ...
PZT (PbZrx Ti1-xO3) thin films have been locally grown by means of sol-gel deposition and local annealing on microhotplates. The microhotplates were based on a stress compensated Si3N4 /SiO2 membranes as structural elements and contained tantalum silicide ...