Laser-Powder-Material Interactions in the Laser Cladding Process
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The measurement of the tokamak plasma ion temperature can be obtained by collective Thomson scattering. This method requires a far infrared laser to achieve useful spatial resolution for typical tokamak plasma parameters. The very low Thomson scattering cr ...
The efficiency of classical gas-dynamic isotope sepn. can be strongly improved with the aid of a relatively weak IR laser. Irradn. in the collisional region of a free jet of SF6 dild. in Ar with a 20-W CO2 laser leads to an increase in the overall enrichme ...
The deposition of Ga on quartz substrates by photodissociation of trimethylgallium has been investigated. Light from a frequency doubled Ar-ion laser beam (257.2 nm) was focused onto quartz substrates. The Ar-ion laser was operated under CW or mode-locking ...
SF6 in a free jet was vibrationally excited by a continuous-wave CO2 laser. The subsequent energy transfer processes, in which vibrational energy is degraded, lead to changes in the beam's spatial, velocity and cluster-size distributions. These changes wer ...
New luminescence centers can be generated by irradiating AlxGa1-xAs structures with focused light from a CW Kr-ion laser operated at 647 nm. The luminescence centers are generated at a laser power density of 0.5 MW/cm2. Regions as small as 0.8 μm wide a ...
The feasibility of a new, 2-laser, isotope sepn. scheme was tested. The 1st laser induces isotopically selective condensation in the collisional region of a free jet of SF6 dild. in Ar. Thus, a mol. beam contg. non-clustered 32SF6 and clustered 34SF6{m}Ar{ ...
The laser-induced pyrolytic deposition of Pt spots on glass was studied for different laser powers, beam diams., and irradn. time. Laser powers up to 500 mW give deposition rates of typically 0.5 mm/s. Temp. calcns. as a function of time allows one to stud ...
Microscopic ohmic contacts are made by laser chem. vapor deposition of platinum on a Pyrex substrate. The elec. cond. of the deposited metal stripes is measured as a function of the laser power, the writing speed, and the organometallic vapor pressure. The ...
Laser generated defects in (Al,Ga) As have been investigated by photochemical wet etching and TEM measurements. Photoetching reveals a 500 nm wide zone in the center of the processed area where according to laser power either a luminescent or a nonradiativ ...
Springer-Verlag (Springer Series in Chemical Physics 39)1984
N-type GaAs substrates have been exposed to zinc atmospheres at 600-800 deg.C and focused light from a Kr-ion laser at 647.1 nm. Etch pits are generated at optical densities of 0.2-10 KW/cm2 and exposure times of 5-60 minutes. They are characterised by a s ...