Laser-Powder-Material Interactions in the Laser Cladding Process
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New luminescence centers can be generated by irradiating AlxGa1-xAs structures with focused light from a CW Kr-ion laser operated at 647 nm. The luminescence centers are generated at a laser power density of 0.5 MW/cm2. Regions as small as 0.8 μm wide a ...
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Springer-Verlag (Springer Series in Chemical Physics 39)1984
The efficiency of classical gas-dynamic isotope sepn. can be strongly improved with the aid of a relatively weak IR laser. Irradn. in the collisional region of a free jet of SF6 dild. in Ar with a 20-W CO2 laser leads to an increase in the overall enrichme ...
The feasibility of a new, 2-laser, isotope sepn. scheme was tested. The 1st laser induces isotopically selective condensation in the collisional region of a free jet of SF6 dild. in Ar. Thus, a mol. beam contg. non-clustered 32SF6 and clustered 34SF6{m}Ar{ ...
SF6 in a free jet was vibrationally excited by a continuous-wave CO2 laser. The subsequent energy transfer processes, in which vibrational energy is degraded, lead to changes in the beam's spatial, velocity and cluster-size distributions. These changes wer ...
N-type GaAs substrates have been exposed to zinc atmospheres at 600-800 deg.C and focused light from a Kr-ion laser at 647.1 nm. Etch pits are generated at optical densities of 0.2-10 KW/cm2 and exposure times of 5-60 minutes. They are characterised by a s ...
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The deposition of Ga on quartz substrates by photodissociation of trimethylgallium has been investigated. Light from a frequency doubled Ar-ion laser beam (257.2 nm) was focused onto quartz substrates. The Ar-ion laser was operated under CW or mode-locking ...