Photoemission-Studies of Reactive Diffusion and Localized Doping at Ii-Vi-Compound Semiconductor-Metal Interfaces

Giorgio Margaritondo
1983
Article

Résumé

Soft x-ray photoemission spectroscopy measurements reveal strong differences in chemical bonding and diffusion between II–VI and III–V compound semiconductor-metal interfaces which provide a chemical basis for their systematic differences in Schottky barrier formation.

Source officielle

https://infoscience.epfl.ch/record/89878?ln=fr

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Photoemission-Studies of Reactive Diffusion and Localized Doping at Ii-Vi-Compound Semiconductor-Metal Interfaces

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