Photoemission and free electron laser spectromicroscopy: Photoemission at high lateral resolution
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Photoelectron spectromicroscopy, the combination of conventional photoelectron spectroscopy and high lateral resolution, is a novel technique that exploits the high brightness of the most recent synchrotron sources. We briefly review its main implementatio ...
High-resolution angle-resolved photoemission and core-level photoemission measurements were performed on single crystal samples of the quasi-one-dimensional material (TaSe4)(2)I and the cuprate superconductor Bi2Sr2CaCu2O8+x. Resistivity measurements were ...
A comparative study has been made of iodine-intercalated Bi2Sr2Ca1Cu2Ox single crystal and 1 atm O2 annealed Bi2Sr2Ca1Cu1Ox single crystal using an AC susceptibility measurement, X-ray photoemission (XPS) and angle-resolved ultraviolet photoemission spectr ...
The third generation sources of soft X-rays, ALS and ELETTRA, have been producing data in surface and interface science for over two years. The impact of their ultrahigh brightness is quite evident, particularly as far as photoemission techniques are conce ...
Photoelectron energy distribution spectra taken for the first time on micrometer-sized areas of cleaved GaAs(110) reveal rigid shifts from location to location in the photoemission core level peak energies, indicating band-bending changes on a microscopic ...
A study of the formation of In- and Au-GaAs(100) interfaces is reported. The metal overlayers are deposited in ultrahigh vacuum on room-temperature (RT) and low-temperature (LT) (100)GaAs grown by molecular-beam epitaxy, following the evaporation of a prot ...
We show that, contrary to intuition and under normal experimental conditions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of ...
High-energy-resolution photoemission spectra, taken on three quasi-one-dimensional crystals, TaTe4, NbTe4, and (NbSe4)3I confirm the general phenomenon of the suppression of the photoemission intensity near the Fermi level in one dimension. We analyze the ...
We describe a new pulsed laser deposition (PLD) system that is linked to an angle-resolved photoemission (ARPES) chamber at the Synchrotron Radiation Center (SRC) in Wisconsin, USA. We also discuss our first results on epitaxially grown YBa2Cu3O7-delta (YB ...
We describe a new pulsed laser deposition (PLD) system that is linked to an angle-resolved photoemission (ARPES) chamber at the Synchrotron Radiation Center (SRC) in Wisconsin, USA. We also discuss our first results on epitaxially grown YBa2Cu3O7-δ (YBCO) ...
