Influence of nitrogen profile an electrical characteristics of furnace- or rapid thermally nitrided silicon dioxide films
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Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
Thin, hydrogenated silicon and carbon containing films have been deposited by the siliconization procedure on targets made from some metal alloys, pure metals, graphite and Si single crystal. The deposits were investigated by electron microprobe and surfac ...
We report the formation of silicon oxide thin films at room temperature obtained by Ar+ ion bombardment of Si(100) wafers in partial oxygen atmosphere. Samples have been prepared at several ion beam energies (0 less than or equal to E(b) less than or equal ...
Using a first-principles approach, we assess the validity of a picture for the energetics at Si-SiO2 interfaces based on bond energies complemented with penalty energies for silicon atoms in intermediate oxidation states. By total-energy calculations on cl ...
For pt.II see ibid. vol.73, p.7690 (1993). In order to investigate the interface between polycrystalline-silicon (poly-Si) and crystalline silicon (c-Si), which is of crucial importance for the passivation of high-voltage devices, an infrared diagnostic me ...
The microstructure and chemical composition of sputtered thin films are strongly correlated with the deposition conditions. In the present work, we report the investigation of the film composition by electron probe microanalysis and photoemission experimen ...
After assessing the current status concerning the interpretation of Si 2p core-level shifts in Si-O systems, we model the atomic structure of the Si(001)-SiO2 interface using recent photoemission data obtained with synchrotron radiation. Our model structur ...
An Sb/Si(lll)root 3x root3 surface has been studied by high-resolution core-level spectroscopy. All the components of the Si 2p core level related to the clean surface have disappeared, and one strong Sb-induced component could be identified at a binding e ...
The dramatic enhancement of the silicon room-temperature oxidation rate by a Na overlayer has been attributed to the spectator catalytic action of the alkali metal. In contrast, we show evidence that Na participates in the oxidation process binding an oxyg ...
