Interface formation and chemical reactions on metal-GaTe(001) surfaces
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
We describe a new pulsed laser deposition (PLD) system that is linked to an angle-resolved photoemission (ARPES) chamber at the Synchrotron Radiation Center (SRC) in Wisconsin, USA. We also discuss our first results on epitaxially grown YBa2Cu3O7-delta (YB ...
We describe a new pulsed laser deposition (PLD) system that is linked to an angle-resolved photoemission (ARPES) chamber at the Synchrotron Radiation Center (SRC) in Wisconsin, USA. We also discuss our first results on epitaxially grown YBa2Cu3O7-δ (YBCO) ...
We explored the reactivity of gold on cleaved 2212 BiCaSrCuO by synchrotron-radiation photoemission spectroscopy. We found no evidence for reactivity when the substrate was at room temperature, similar to what has been reported for very low temperatures (2 ...
We studied the deposition of Au, In, Ag, and Al overlayers onto clean-cleaved GaTe(001) surfaces at room temperature by x-ray photoelectron spectroscopy. Gold and In overlayers did not produce evidence of chemical reactions, and neither with cation nor ani ...
We report a modification by thin silicon nitride intralayers of the Au/n-GaAs)(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon-nitrogen mixture plasma. The nitridati ...
Schottky-barrier formation for Al on GaAs(110) was analyzed theoretically and with the aid of synchrotron-radiation photoemission experiments as a function of the metal coverage. For various Al-overlayer thicknesses we calculated the most stable geometries ...
This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interfac ...
The Schottky-barrier formation of the Au/GaP (110) interface has been investigated by photoemission, in the presence of large surface photovoltage effects induced by the intense photon beam of a synchrotron-radiation source. The surface photovoltage has be ...
This dissertation is concerned with the development of a methodology and appropriate tools for the investigation of chemical reaction systems using measured data. More specifically, the determination of reaction stoichiometry and kinetics from concentratio ...
We identified the nature of the chemical reaction between silver and the cleaved surface of BiCaSrCuO at room temperature as a Bi-Ag reaction with Bi segregation, accompanied by interaction with the Sr atoms. Our synchrotron-radiation photoemission spectra ...
