Publications associées à Modeling of Cd Uptake and Efflux Kinetics in Metal-Resistant Bacterium Cupriavidus metallidurans

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Modelling electronic transport in monocrystalline metal oxide gas sensors: from the surface kinetics to the experimental response

Roberto Guarino, Gianluca Piccinini

Gas sensing systems and devices based on metal oxides are widely spreading due to their high performance in terms of sensor response and relatively low costs. Despite several experimental studies, as well as molecular simulations, are available in the lite ...

2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

A Two-Step Approach To Leverage Contextual Data: Speech Recognition In Air-Traffic Communications

Petr Motlicek, Juan Pablo Zuluaga Gomez, Amrutha Prasad

Automatic Speech Recognition (ASR), as the assistance of speech communication between pilots and air-traffic controllers, can significantly reduce the complexity of the task and increase the reliability of transmitted information. ASR application can lead ...

IEEE2022

Key factors determining the presence of Tree-related Microhabitats: A synthesis of potential factors at site, stand and tree scales, with perspectives for further research

Rita Bütler Sauvain

Tree-related microhabitats (TreMs) have been identified as key features for forest-dwelling taxa and are often employed as measures for biodiversity conservation in integrative forest management. However, managing forests to ensure an uninterrupted resourc ...

2022

Time-resolved physical spectrum in cavity quantum electrodynamics

Alexey Lyasota

The time-resolved physical spectrum of luminescence is theoretically studied for a standard cavity quantum electrodynamics system. In contrast to the power spectrum for the steady state, the correlation functions up to the present time are crucial for the ...

AMER PHYSICAL SOC2022

A universal co-solvent dilution strategy enables facile and cost-effective fabrication of perovskite photovoltaics

Michael Graetzel, Shaik Mohammed Zakeeruddin, Ursula Röthlisberger, Sandy Sanchez Alonso, Ulf Anders Hagfeldt, Dan Ren, Hong Zhang, Linfeng Pan, Paramvir Ahlawat, Anurag Krishna

Cost management and toxic waste generation are two key issues that must be addressed before the commercialization of perovskite optoelectronic devices. We report a ground-breaking strategy for eco-friendly and cost-effective fabrication of highly efficient ...

Nature Research2022

Anti-Jahn-Teller effect induced ultrafast insulator to metal transition in perovskite BaBiO3

Changpeng Lin, Ben Xu

The Jahn-Teller (JT) effect involves the ions M with a degenerate electronic state distorting the corner-sharing MO6 octahedra to lift the degeneracy, inducing strong coupling of electrons to lattice, and mediating the exotic properties in perovskite oxide ...

NATURE PORTFOLIO2022

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu, Pirouz Sohi, Mohammad Samizadeh Nikooytabalvandani

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Institute of Electrical and Electronics Engineers2021