Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (29)

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Gennaro Termo, Stefano Michelis

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Method and setup for light detection and ranging

Tobias Kippenberg, Anton Lukashchuk

A method and a setup for light detection and ranging are disclosed. The setup is configured to carry out the following method: generating signal radiation (S) at multiple signal frequencies (fs) with an optical signal source (1), wherein the signal radiati ...

2023

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Edoardo Charbon, Francesco Piro, Ashish Sharma

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...

Iop Publishing Ltd2023

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Farzan Jazaeri

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

Evaluation of neutron dose rates at the TCV tokamak facility

Patrick Blanchard, Henri Weisen, Matteo Vallar

A detailed MCNP neutronics model of the building housing the TCV tokamak has been developed. Predicted dose rates have been compared to neutron dose measurements at 12 locations in the building obtained during neutral beam injection into TCV plasmas. This ...

2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Matteo Cucchi, Hsin Tseng

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Mukesh Kumar Tripathi, Yanfei Zhao, Ahmet Avsar, Kristians Cernevics, Zhenyu Wang, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

Single Chip Dynamic Nuclear Polarization Microsystems

Nergiz Sahin Solmaz

Nuclear magnetic resonance (NMR) methods are powerful tools employed in many fields, including physics, chemistry, material science, biology, and medicine. The use of NMR methodologies in an even wider range of applications is often hindered by the relativ ...

EPFL2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Page 2 sur 3

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

EPFL2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Gennaro Termo, Stefano Michelis

IOP Publishing Ltd2023

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Edoardo Charbon, Francesco Piro, Ashish Sharma

Iop Publishing Ltd2023