Publication
Energy efficiency is of utmost importance in modern applications. Power consumption optimisation could be improved by a comprehensive analytical modeling of the characteristics of critical blocks in a system. Dynamic range (DR) has a strong effect on the power consumption of analog circuits, and is determined by circuit non-linearity and noise level. Noise is well modelled even in deep sub-micron technologies, yet there is a lack of analysis and modeling of the non-linearity. An analytical MOSFET differential pair non-linearity model is presented in this work. The proposed model is universal to a wide range of technologies from long to ultra-deep sub-micron devices, and is valid for all operating regions as it is based on the EKV MOSFET model. Furthermore, a model including drain-voltage-induced non-linearity is also developed, and a concise 3dB input intercept point (IIP3) formula incorporating the drain induced non-linearity in terms of the voltage gain is presented. The proposed models are validated with DC and AC simulations and measurements.