Laboratoire en semiconducteurs avancés pour la photonique et l'électronique
Laboratoire
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A dual-shot technique based on the field basis addition of two statistically independent speckle patterns is developed to recover an input polarization through a scattering layer. It is proposed theoretically, and demonstrated both numerically and experime ...
This talk will highlight opportunities for terahertz science and technology from nonlinear integrated photonic circuits by exploring waveguides, resonators and terahertz antennas. Their present and future applications in metrology, emission and waveform co ...
This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...
Superconducting qubits are among the most advanced candidates for achieving fault-tolerant quantum computing. Despite recent significant advancements in the qubit lifetimes, the origin of the loss mechanism for state-of-the-art qubits is still subject to i ...
The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...
Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...
Using ultrafast broad-band transient absorption (TA) spectroscopy of photoexcited MAPbBr3 thin films with probe continua in the visible and the mid- to deep-ultraviolet (UV) ranges, we capture the ultrafast renormalization at the fundamental gap at the R s ...
This research presents a comprehensive comparative analysis of the passivation kinetics of OFP-Cu and OF-Cu in simulated repository electrolyte. The study employs a range of techniques, including potentiodynamic polarization, multi-step potentiostatic pola ...
In this article, we present 10 mu m diameter SPADs fabricated in 110 nm CIS technology based on an N (+) /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compe ...
Fields of technology as diverse as microwave filter construction, characterization of material interfaces with atomic precision, and detection of gravitational waves from astronomical sources employ mechanical resonators at their core. The utility of mecha ...
