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This lecture explores the most common defect types in 2D materials, focusing on point defects like vacancies and substitutions, line defects such as grain boundaries and lateral heterostructures, and two-dimensional defects like wrinkles and ripples. The influence of these defects on field-effect transistor characteristics is discussed, along with the formation energy and concentration of point defects. The presentation also covers transport in disordered semiconductors, quantum capacitance, and van der Waals epitaxy. Practical examples and experimental results are provided to illustrate the concepts.