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Matthieu Berthomé

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Related publications (5)

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Matthieu Berthomé

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Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm