Using a first-principles approach, we assign N 1s core-level shifts at ammonium exposed Si(001)2x1 surfaces to definite bonding configurations of N atoms. Model structures are obtained by fully relaxing the atomic positions of N atoms in different bonding configurations. Calculated values of N 1s core-level shifts of N-Si-3, N-Si2H, and N-SiH2 structural units show a linear dependence on the number of nearest-neighbor H atoms, in good agreement with data from photoemission experiments. Our results support the picture in which NH3 is adsorbed dissociatively as NH2 and H. (C) 2000 American Institute of Physics. [S0003-6951(00)00305-3].
Klaus Kern, Hagen Klauk, Uta Schlickum, Peter Wahl, Ivan Pentegov, Verena Katharina Schendel
Fabio Nobile, Yoshihito Kazashi, Fabio Zoccolan
Basil Duval, Holger Reimerdes, Christian Gabriel Theiler, Joaquim Loizu Cisquella, Artur Perek, Guang-Yu Sun, Sophie Danielle Angelica Gorno, Claudia Colandrea, Luke Simons, Garance Hélène Salomé Durr-Legoupil-Nicoud, Davide Galassi, Lorenzo Martinelli, Curdin Tobias Wüthrich