In this review we first present the two classes of non-reactive and reactive surfactants effective during homoepitaxy and heteroepitaxy, respectively. We then describe and analyse the results obtained by ''true'' surfactant-mediated molecular-beam epitaxy (SM-MBE) of Ga1-xInxAs layers on GaAs substrates. Then, the data obtained by using In as a ''virtual'' surfactant during SM-MBE of InAs layers on AlxGa0.48-x In0.52As/InP and GaAs substrates are presented. We finally provide evidence that the growth mode influences the resulting defect microstructure in (partially) relaxed layers.
Jan Sickmann Hesthaven, Nicolò Ripamonti, Cecilia Pagliantini
Marco Mattavelli, Anna Marsano
Francesco Varrato, Chiara Gabella, Eliane Ninfa Blumer