Publication

MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

Nicolas Grandjean
2003
Journal paper

Abstract

In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high-frequency performances of sub-micron gate length devices are analyzed demonstrating their RF power capability. (C) 2002 Elsevier Science B.V. All rights reserved.

Official source

https://infoscience.epfl.ch/record/152752?ln=en

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MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

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