In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. ©2008 IEEE.
Varun Sharma, Konstantin Androsov, Xin Chen, Rakesh Chawla, Werner Lustermann, Andromachi Tsirou, Alexis Kalogeropoulos, Andrea Rizzi, Thomas Muller, David Vannerom, Albert Perez, Alessandro Caratelli, François Robert, Davide Ceresa, Yong Yang, Ajay Kumar, Ashish Sharma, Georgios Anagnostou, Kai Yi, Jing Li, Stefano Michelis, David Parker, Martin Fuchs
Edoardo Charbon, Claudio Bruschini, Andrei Ardelean, Paul Mos, Arin Can Ülkü, Michael Alan Wayne