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This paper explores the potential of VeFETs for mixed-signal circuits. A new physics-based compact DC model of the VeSFET operated in subthreshold region is presented and used to derive 1st-order sensitivities of the device threshold voltage to process variations. The VeSFET is compared to the MOSFET transistor, and its advantages and limitations are discussed. Using a Sea-of-Gates-like structure, layout strategies for area-efficient implementation of digital and analog functions are proposed. Finally, the implementation of a mixed-signal circuit (an OTA with chopper modulation) is presented to demonstrate the area-efficiency of circuit implemented with Sea-of-Gates VeSFETs. © 2011 Tech Univ of Lodz
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