Publication
An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrodinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, Si0.5Ge0.5, and Si films. It is found that depending on the channel material and channel thickness, the EHBTFET can operate either as a 2-D-2-D or 3-D-3-D tunneling device. InAs offers the highest I-ON, whereas for the Si and Si0.5Ge0.5 EHBTFETs, significant current levels cannot be achieved within a reasonable voltage range. The general trends are explained through an analytical model that shows close agreement with the numerical results.
Drazen Dujic, Renan Pillon Barcelos, Nikolina Djekanovic
Claudia Rebeca Binder Signer, Aristide Henri Roger Athanassiadis, Nicole Sophie Wiedmann