This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.
Edoardo Charbon, Francesco Piro, Ashish Sharma
Sylvain Dunand, Matthew James Large, Giulia Rossi