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The present invention concerns a waveguide amplifier comprising: - at least one embedding cladding material or layer, and - at least one rare-earth ion implanted silicon nitride material or layer embedded in the at least one embedding cladding material or layer, the at least one rare-earth ion implanted silicon nitride material or layer defining a waveguide core enclosed by the at least one embedding cladding material or layer.
Romain Christophe Rémy Fleury, Maliheh Khatibi Moghaddam
Romain Christophe Rémy Fleury, Amir Jafargholi, Jalaledin Tayebpour
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