A microbolometer is a specific type of bolometer used as a detector in a thermal camera. Infrared radiation with wavelengths between 7.5–14 μm strikes the detector material, heating it, and thus changing its electrical resistance. This resistance change is measured and processed into temperatures which can be used to create an image. Unlike other types of infrared detecting equipment, microbolometers do not require cooling.
A microbolometer is an uncooled thermal sensor. High resolution thermal sensors require exotic and expensive cooling methods including stirling cycle coolers and liquid nitrogen coolers. These methods of cooling high resolution thermal imagers are expensive to operate and unwieldy to move. Also, high resolution thermal imagers require a cool down time in excess of 10 minutes before being usable.
A microbolometer consists of an array of pixels, each pixel being made up of several layers. The cross-sectional diagram shown in Figure 1 provides a generalized view of the pixel. Each company that manufactures microbolometers has their own unique procedure for producing them and they even use a variety of different IR absorbing materials. In this example the bottom layer consists of a silicon substrate and a readout integrated circuit (ROIC). Electrical contacts are deposited and then selectively etched away. A reflector, for example, a titanium mirror, is created beneath the IR absorbing material. Since some light is able to pass through the absorbing layer, the reflector redirects this light back up to ensure the greatest possible absorption, hence allowing a stronger signal to be produced. Next, a sacrificial layer is deposited so that later in the process a gap can be created to thermally isolate the IR absorbing material from the ROIC. A layer of absorbing material is then deposited and selectively etched so that the final contacts can be created. To create the final bridge like structure shown in Figure 1, the sacrificial layer is removed so that the absorbing material is suspended approximately 2 μm above the readout circuit.
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