Admittance parameters

Summary

Admittance parameters or Y-parameters (the elements of an admittance matrix or Y-matrix) are properties used in many areas of electrical engineering, such as power, electronics, and telecommunications. These parameters are used to describe the electrical behavior of linear electrical networks. They are also used to describe the small-signal (linearized) response of non-linear networks. Y parameters are also known as short circuited admittance parameters. They are members of a family of similar parameters used in electronic engineering, other examples being: S-parameters, Z-parameters, H-parameters, T-parameters or ABCD-parameters. The Y-parameter matrix A Y-parameter matrix describes the behaviour of any linear electrical network that can be regarded as a black box with a number of ports. A port in this context is a pair of electrical terminals carrying equal and opposite currents into and out of the network, and having a particular voltage between them. The Y-matrix gives no

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On the Properties of the Compound Nodal Admittance Matrix of Polyphase Power Systems

Andreas Martin Kettner, Mario Paolone

Most techniques for power system analysis model the grid by exact electrical circuits. For instance, in power flow study, state estimation, and voltage stability assessment, the use of admittance parameters (i.e., the nodal admittance matrix) and hybrid parameters is common. Moreover, network reduction techniques (e.g., Kron reduction) are often applied to decrease the size of large grid models (i.e., with hundreds or thousands of state variables), thereby alleviating the computational burden. However, researchers normally disregard the fact that the applicability of these methods is not generally guaranteed. In reality, the nodal admittance must satisfy certain properties in order for hybrid parameters to exist and Kron reduction to be feasible. Recently, this problem was solved for the particular cases of monophase and balanced triphase grids. This paper investigates the general case of unbalanced polyphase grids. Firstly, conditions determining the rank of the so-called compound nodal admittance matrix and its diagonal subblocks are deduced from the characteristics of the electrical components and the network graph. Secondly, the implications of these findings concerning the feasibility of Kron reduction and the existence of hybrid parameters are discussed. In this regard, this paper provides a rigorous theoretical foundation for various applications in power system analysis.

2018

Voltage Control in Active Distribution Networks Under Uncertainty in the System Model: A Robust Optimization Approach

Konstantina Christakou, Mario Paolone

Within the context of ancillary services for Active Distribution Networks (ADNs), application of intelligent control techniques is required in order to achieve specific operation objectives. Despite their differences, most control mechanisms proposed in the literature rely on the assumption that the Distribution Network Operator (DNO) has an accurate and upto- date model of the network topology and a complete knowledge of the line parameters, i.e., a correct network admittance matrix Y. However, this assumption does not always hold in reality due to both an incomplete knowledge of the grid asset and /or a physical change of the line parameters. In this work, we consider the problem of optimal voltage control in ADNs under uncertain, but bounded, line parameters with no assumptions on the parameters’ uncertainty distribution. In particular, availability of a monitoring infrastructure is assumed and the goal is to control the active and reactive power injections of a number of distributed generators connected to the network buses in coordination with the transformers on-load tap changers (OLTC). The optimal control problem is formulated as a mixedinteger linear problem by means of sensitivity coefficients and a robust optimization framework is used in order to account for the uncertainties in the network admittance matrix. In order to estimate the benefits of the proposed method, the evaluation of the algorithm is carried out by using both the IEEE 13-and the IEEE 34-nodes test feeder.

2018

This paper presents the basis of the modeling of the MOS transistor for circuit simulation at RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first derived. The subcircuit includes a substrate network that accounts for the signal coupling occurring at HF from the drain to the source and the bulk. It is shown that the latter mainly affects the output admittance y22. The bias and geometry dependence of the subcircuit components, leading to a scalable model, are then discussed with emphasis on the substrate resistances. Analytical expressions of the Y parameters are established and compared to measurements made on a 0.25-μm CMOS process. The Y parameters and transit frequency simulated with this scalable model versus frequency, geometry, and bias are in good agreement with measured data. The nonquasi-static effects and their practical implementation in the Spice subcircuit are then briefly discussed. Finally, a new thermal noise model is introduced. The parameters used to characterize the noise at HF are then presented and the scalable model is favorably compared to measurements made on the same devices used for the S-parameter measurement.

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