Publications related to Insulated-gate bipolar transistor

Simulation, Analysis, and Verification of Substrate Currents for Layout Optimization of Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

Today circuit failures in Smart Power ICs due to substrate couplings are partially addressed during the circuit design phase. The state-of-the-art guidelines for the optimization of parasitic couplings provide mainly qualitative rules, which are difficult ...

Institute of Electrical and Electronics Engineers2016

Active Guard Ring Characterization for Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This paper shows SPICE simulation results of active guard ring structures which are typically employed in Smart Power ICs. Active guard rings act as barriers limiting the flow of minority carriers injected into the substrate toward sensitive circuits. The ...

Ieee2016

Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2

László Forró, Helmuth Berger

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The ...

Amer Physical Soc2016

A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications

Adam Shmuel Teman, Robert Giterman, Pascal Andreas Meinerzhagen

Continuous transistor scaling, coupled with the growing demand for low-voltage, low-power applications, increases the susceptibility of VLSI circuits to soft-errors, especially when exposed to extreme environmental conditions, such as those encountered by ...

Institute of Electrical and Electronics Engineers2016

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

The electron-hole bilayer tunnel (EHBTFET). has been proposed as a density of states (DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room temperature; however, one of the main challenges is the control of the lateral band-t ...

Institute of Physics2016

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Mihai Adrian Ionescu, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

2016

THz time-domain spectroscopy and IR spectroscopy on MoS2

Andras Kis, Dumitru Dumcenco, Daniel Gabriel

In the increasing research field of 2D materials such as graphene, molybdenum disulfide MoS2 has attracted great interest due to the existence of a direct bandgap in monolayer MoS2, which gives the possibility of achieving MoS2 field-effect transistors or ...

Wiley-Blackwell2016

Single field effect transistor capacitor-less memory device and method of operating the same

Mihai Adrian Ionescu, Arnab Biswas, Nilay Dagtekin

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

Technology Transfer Office EPFL2016

Ultrasensitive 1D field-effect phototransistors: CH3NH3PbI3 nanowire sensitized individual carbon nanotubes

László Forró, Endre Horvath, Richard Gaal, Bálint Náfrádi, Massimo Spina, Eric Joseph Bonvin

Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH3NH3PbI3 nanowires (MAPbI(3)NWs). These devices represent light responsivities of R = 7.7 x 10(5) A W-1 under low-lighting conditions in the nW mm(-2) ...

Royal Soc Chemistry2016

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Insulated-gate bipolar transistor

Differentiating Siblings: The Case of Dopamine and Norepinephrine

Simulation, Analysis, and Verification of Substrate Currents for Layout Optimization of Smart Power ICs

Active Guard Ring Characterization for Smart Power ICs

Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2

A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

THz time-domain spectroscopy and IR spectroscopy on MoS2

Single field effect transistor capacitor-less memory device and method of operating the same

Ultrasensitive 1D field-effect phototransistors: CH3NH3PbI3 nanowire sensitized individual carbon nanotubes

Graph Chatbot

Chat with Graph Search

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2

Ultrasensitive 1D field-effect phototransistors: CH3NH3PbI3 nanowire sensitized individual carbon nanotubes

Simulation, Analysis, and Verification of Substrate Currents for Layout Optimization of Smart Power ICs

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications

THz time-domain spectroscopy and IR spectroscopy on MoS2

Single field effect transistor capacitor-less memory device and method of operating the same

Differentiating Siblings: The Case of Dopamine and Norepinephrine

Active Guard Ring Characterization for Smart Power ICs