Concept
Electron-beam lithography
Related concepts (9)
Extreme ultraviolet lithography
Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.
Photomask
A photomask is an opaque plate with transparent areas that allow light to shine through in a defined pattern. Photomasks are commonly used in photolithography for the production of integrated circuits (ICs or "chips") to produce a pattern on a thin wafer of material (usually silicon). Several masks are used in turn, each one reproducing a layer of the completed design, and together known as a mask set. For IC production in the 1960s and early 1970s, an opaque rubylith film laminated onto a transparent mylar sheet was used.
Photoresist
A photoresist (also known simply as a resist) is a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is crucial in the electronics industry. The process begins by coating a substrate with a light-sensitive organic material. A patterned mask is then applied to the surface to block light, so that only unmasked regions of the material will be exposed to light. A solvent, called a developer, is then applied to the surface.
Photolithography
In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.
Thermionic emission
Thermionic emission (also known as thermal electron emission or the Edison effect) is the liberation of electrons from an electrode by virtue of its temperature (releasing of energy supplied by heat). This occurs because the thermal energy given to the charge carrier overcomes the work function of the material. The charge carriers can be electrons or ions, and in older literature are sometimes referred to as thermions. After emission, a charge that is equal in magnitude and opposite in sign to the total charge emitted is initially left behind in the emitting region.
Transmission electron microscopy
Transmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through a specimen to form an image. The specimen is most often an ultrathin section less than 100 nm thick or a suspension on a grid. An image is formed from the interaction of the electrons with the sample as the beam is transmitted through the specimen. The image is then magnified and focused onto an imaging device, such as a fluorescent screen, a layer of photographic film, or a sensor such as a scintillator attached to a charge-coupled device.
Vacuum tube
A vacuum tube, electron tube, valve (British usage), or tube (North America), is a device that controls electric current flow in a high vacuum between electrodes to which an electric potential difference has been applied. The type known as a thermionic tube or thermionic valve utilizes thermionic emission of electrons from a hot cathode for fundamental electronic functions such as signal amplification and current rectification.
Cathode ray
Cathode rays or electron beam (e-beam) are streams of electrons observed in discharge tubes. If an evacuated glass tube is equipped with two electrodes and a voltage is applied, glass behind the positive electrode is observed to glow, due to electrons emitted from the cathode (the electrode connected to the negative terminal of the voltage supply). They were first observed in 1859 by German physicist Julius Plücker and Johann Wilhelm Hittorf, and were named in 1876 by Eugen Goldstein Kathodenstrahlen, or cathode rays.
Semiconductor device fabrication
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.