Extreme ultraviolet lithography

Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist. It is currently applied only in the most advanced semiconductor device fabrication. , ASML Holding is the only company who produces and sells EUV systems for chip production, targeting 5 nm and 3 nm process nodes. At the 2019 International Electron Devices Meeting (IEDM), TSMC reported use of EUV for its 5 nm node in contact, via, metal line, and cut layers, where the cuts can be applied to fins, gates or metal lines. At IEDM 2020, TSMC repor

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Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiN x stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

2014

Field-effect passivation on silicon nanowire solar cells (vol 8, pg 673, 2015)

Anna Dalmau Mallorquí, Stefaan De Wolf, Bénédicte Demaurex, Anna Fontcuberta i Morral, Amirreza Kiani

Surface recombination represents a handicap for high-efficiency solar cells. Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n–p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

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In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over

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Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such

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A photomask is an opaque plate with transparent areas that allow light to shine through in a defined pattern. Photomasks are commonly used in photolithography for the production of integrated circu

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